A Magnon-Based Electric Field Controlled Magnetoelectric Device for Energy-Efficient Logic-in-Memory

TL;DR

This paper introduces a magnon-based magnetoelectric memory device that uses electric fields for energy-efficient, high-speed logic-in-memory operations, supported by experimental validation and circuit modeling.

Contribution

It presents a novel non-volatile magnonic memory device with integrated circuit modeling, enabling energy-efficient logic-in-memory applications with high-speed switching.

Findings

Sub-100 ps switching speed achieved

Remnant polarization of 20 uC/cm2 demonstrated

Projected switching energy as low as 1 aJ per operation

Abstract

We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100 ps switching, a remnant polarization of 20 uC/cm2, and a readout voltage contrast close to 1mV between high and low-resistance states. To connect device physics to circuit behavior, we develop and experimentally validate a compact circuit model that captures spin Hall injection and spin transport. Simulations with optimized material parameters predict output voltages > 100mV, enabling cascading without external amplification. Using this framework, we design MEMM-based memory and logic blocks, including a 1T1R array, two inverter implementations (complementary two-device and single-device), and a three-input majority gate, and evaluate deep-pipelined operation. The model projects switching energies down to 1 aJ per operation and logic propagation delays of 30-60 ps, indicating MEMM as a promising platform for energy-constrained, high throughput computing.