ORAP: Optimized Row Access Prefetching for Rowhammer-mitigated Memory
Maccoy Merrell, Daniel Puckett, Gino Chacon, Jeffrey Stuecheli, Stavros Kalafatis, Paul V. Gratz

TL;DR
This paper introduces ORAP, a prefetching technique that reduces DRAM activations and improves performance in Rowhammer-mitigated memory systems by caching rowbuffer contents in LLC.
Contribution
ORAP leverages LLC space to cache DRAM rowbuffer contents, significantly reducing activations and improving speed and energy efficiency in mitigated memory systems.
Findings
ORAP reduces DRAM activation rates by 51.3%.
ORAP achieves a 4.6% speedup over existing prefetchers.
ORAP reduces energy overheads by 11.8% under PRAC mitigations.
Abstract
Rowhammer is a well-studied DRAM phenomenon wherein multiple activations to a given row can cause bit flips in adjacent rows. Many mitigation techniques have been introduced to address Rowhammer, with some support being incorporated into the JEDEC DDR5 standard for per-row-activation-counter (PRAC) and refresh-management (RFM) systems. Mitigation schemes built on these mechanisms claim to have various levels of area, power, and performance overheads. To date the evaluation of existing mitigation schemes typically neglects the impact of other memory system components such as hardware prefetchers. Nearly all modern systems incorporate hardware prefetching and these can significantly improve processor performance through speculative cache population. These prefetchers induce higher numbers of downstream memory requests and increase DRAM activation rates. The performance overhead of…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsParallel Computing and Optimization Techniques · Advanced Data Storage Technologies · Distributed systems and fault tolerance
