Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy

TL;DR

This study investigates how different Ga/N flux conditions affect Mn incorporation in GaN grown by plasma-assisted molecular beam epitaxy, revealing flux-dependent variations in Mn sticking coefficients.

Contribution

It provides quantitative measurements of Mn sticking coefficients under Ga-rich, N-rich, and no-flux conditions in GaN growth, highlighting flux-dependent Mn incorporation behavior.

Findings

Mn incorporation is highest under N-rich conditions.

Mn sticking coefficient is 0.31 with no-flux and 0.01 under Ga-rich conditions.

Growth conditions significantly influence Mn incorporation efficiency.

Abstract

This brief report examines the influence of Ga/N flux conditions on Mn incorporation in GaN. Mn-doped GaN layers were grown at 680$^{\circ}$C by molecular beam epitaxy on a Ga-polar GaN(0001) template substrate under Ga-rich, N-rich, and no-flux conditions (i.e., Mn $\delta$ doping). Mn incorporation was highest under N-rich condition, lowest under Ga-rich condition, and intermediate in the absence of Ga and N fluxes. For the growth conditions examined in this study, the corresponding Mn sticking coefficients, relative to that of the N-rich condition, were determined to be 0.31 for no-flux growth and 0.01 for the Ga-rich growth.