Nonlinear integrated quantum photonics with AlGaAs

TL;DR

This paper reviews the development of integrated quantum photonics using AlGaAs, highlighting recent advances in quantum light sources, photonic circuits, and quantum state engineering enabled by the material's nonlinear properties.

Contribution

It provides a comprehensive overview of AlGaAs-based quantum photonics, emphasizing recent implementations and discussing future challenges in the field.

Findings

Room-temperature quantum light sources demonstrated

Integrated photonic circuits with various functionalities realized

Quantum state engineering enabled by nonlinear properties

Abstract

Integrated photonics provides a powerful approach for developing compact, stable and scalable architectures for the generation, manipulation and detection of quantum states of light. To this end, several material platforms are being developed in parallel, each providing its specific assets, and hybridization techniques to combine their strengths are now possible. This review focuses on AlGaAs, a III-V semiconductor platform combining a mature fabrication technology, direct band-gap compliant with electrical injection, low-loss operation, large electro-optic effect, and compatibility with superconducting detectors for on-chip detection. We detail recent implementations of room-temperature sources of quantum light based on the high second- and third-order optical nonlinearities of the material, as well as photonic circuits embedding various functionalities ranging from polarizing beamsplitters to Mach-Zehnder interferometers, modulators and tunable filters. We then present several realizations of quantum state engineering enabled by these recent advances and discuss open perspectives and remaining challenges in the field of integrated quantum photonics with AlGaAs.