Growth and Transport Properties of InAsSb Nanoflags

TL;DR

This paper reports the first successful growth and characterization of high-quality InAsSb nanoflags, revealing their promising electronic properties and potential for quantum applications due to surface Fermi level pinning and favorable mobility.

Contribution

It introduces the first growth of free-standing InAsSb nanoflags and characterizes their electronic properties, highlighting their suitability for quantum device integration.

Findings

InAs0.77Sb0.23 nanoflags are approximately 2000 nm long and 640 nm wide.

These nanoflags exhibit a Landé g-factor larger than InAs and InSb.

They show surface Fermi level pinning similar to InAs.

Abstract

The present work reports, for the first time, the growth of high-quality free-standing InAsSb nanoflags and their electronic properties. Different growth conditions have been explored, and zinc-blende InAsSb nanoflags of various composition have been obtained. In particular, InAs0.77Sb0.23 nanoflags are on average (2000+-180) nm long, (640+-50) nm wide, and (130+-30) nm thick. We show that these nanoflags have a Land\'e g-factor larger than InAs and InSb and a mobility comparable to those of the best performing InAs and InSb nanoflags. Besides, we show evidence for a surface Fermi level pinning in the conductance band of these InAs0.77Sb0.23 nanoflags, similar to the well-known behavior of InAs. This promises to make InAsSb easy to couple to superconductors, while keeping or improving many of the features that make InSb an interesting material for quantum applications.