Disentangling orbital and confinement contributions to $g$-factor in Ge/SiGe hole quantum dots
L. Sommer, I. Seidler, F. J. Schupp, S. Paredes, N. W. Hendrickx, L. Massai, K. Tsoukalas, A. Orekhov, E. G. Kelly, S. W. Bedell, G. Salis, M. Mergenthaler, P. Harvey-Collard, A. Fuhrer, and T. Ihn

TL;DR
This study disentangles the orbital and confinement effects on the hole $g$-factor in Ge/SiGe quantum dots, revealing gate-tunability and clarifying previous measurement discrepancies crucial for qubit control.
Contribution
It introduces a method to distinguish pure Zeeman and orbital contributions to the $g$-factor in hole quantum dots, enhancing understanding of spin-orbit effects in qubit systems.
Findings
Orbital and Zeeman contributions to $g$-factor are distinguishable using excitation spectra.
Gate-tuning of $g$-factors by 15% demonstrates control over qubit properties.
Discrepancies between different measurement methods are clarified by separating orbital effects.
Abstract
Spin qubits are typically operated in the lowest orbital of a quantum dot to minimize interference from nearby states. In valence-band hole systems, strong spin-orbit coupling links spin and orbital degrees of freedom, strongly influencing the hole -factor, a key parameter for qubit control. We investigate the out-of-plane -factor in Ge quantum dots using excitation (single-particle) and addition (many-body) spectra. Excitation spectra allow us to distinguish the pure Zeeman -factor from orbital contributions to the magnetic field splitting of states despite the strong spin-orbit coupling. This distinction clarifies discrepancies between -factors extracted with the two methods, for different orbital states and different hole numbers. Furthermore, we find gate-tunability of -factors at the level of 15%, highlighting its relevance for all-electric qubit manipulation.
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Taxonomy
TopicsQuantum and electron transport phenomena · Semiconductor Quantum Structures and Devices · Chemical and Physical Properties of Materials
