Direct Visualization of Room-temperature Stair-stepped Quantum Spin Hall States in Bi4Br4
Zhiqiang Hu, Yuqi Zhang, Yuyang Wang, Kebin Xiao, Xiang Li, Zhiwei Wang, Huaixin Yang, Yugui Yao, Qi-Kun Xue, Wei Li

TL;DR
This study demonstrates room-temperature quantum spin Hall states in Bi4Br4 nanowires using microwave impedance microscopy, revealing scalable, stable topological edge states suitable for practical electronic applications.
Contribution
It introduces a stair stepped multilayer configuration enabling robust, scalable QSH states at room temperature, overcoming previous material and structural limitations.
Findings
QSH states persist up to 300 K in Bi4Br4 nanowires
Stair stepped stacking preserves edge state decoupling
Scaling of signals confirms stair stepped origin
Abstract
Topological insulators host exotic quantum phenomena such as the quantum spin Hall (QSH) effect, which enables dissipationless one-dimensional edge conduction. Realizing such states at room temperature and on a macroscopic scale is essential for energy-efficient electronics and quantum technologies, yet remains a fundamental challenge due to material limitations. Here, using microwave impedance microscopy, we directly visualize robust QSH states persisting up to 300 K in {\alpha}-Bi4Br4 nanowires. This stability and scalability are enabled by a stair stepped stacking configuration, a multilayer geometry in which QSH edge states from individual layers remain spatially decoupled. This configuration circumvents the stringent alignment and layer number constraints of previous proposals, allowing robust stair-stepped QSH (SS-QSH) conduction in structures several micrometers long and hundreds…
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Taxonomy
TopicsTopological Materials and Phenomena · Quantum and electron transport phenomena · Chemical and Physical Properties of Materials
