Meissner-Ochsenfeld effect in semiconductor nanostructures with negative-U shells

TL;DR

This study demonstrates the room-temperature Meissner-Ochsenfeld effect in silicon nanostructures with negative-U boron centers, showing their diamagnetic response and nondissipative magnetic transport properties.

Contribution

It provides the first experimental evidence of the Meissner-Ochsenfeld effect at room temperature in semiconductor nanostructures with negative-U shells, highlighting their potential for magnetic applications.

Findings

Room-temperature diamagnetic response observed in silicon nanostructures.

Good agreement between magnetization and EMF measurements.

Evidence of nondissipative magnetic transport in edge channels.

Abstract

The Meissner-Ochsenfeld effect is demonstrated for the first time at room temperature. The diamagnetic response of a silicon nanostructure with edge channels covered by chains of negative U dipole boron centers is studied when put in (removed from) an external magnetic field. Measurements of the diamagnetic response were carried out by recording the values of magnetization and generation currents. There is good agreement between the results of measurements of the generated internal magnetic field obtained using a ferroprobe and recording the EMF induced by the occurrence of generation currents in an external magnetic field, which determines the conditions of the mechanism of the nondissipative transport in the edge channels at room temperature, which is caused by their interactions with single carriers through negative U dipole boron centers. The interrelation of the magnetization hysteresis and the magnitude of the EMF induced by the occurrence of generation currents indicates the possibilities of the electrical registration of the Meissner-Ochsenfeld effect in nanostructures manufactured within the framework of the Hall geometry.