Spin-active chlorine-related centers in 4H-SiC with telecom-band emissions
Danial Shafizadeh, Misagh Ghezellou, Viktor M. Bobal, Lasse Vines, Jawad Ul-Hassan, Valdas Jokubavicius, Nguyen T. Son, and Ivan G. Ivanov

TL;DR
This study identifies a chlorine-related defect in 4H-SiC that emits telecom-band light and is spin-active at room temperature, making it promising for quantum network applications.
Contribution
It reports the discovery and characterization of a new Cl-related center in 4H-SiC with stable optical and magnetic properties suitable for quantum technologies.
Findings
Emits telecom wavelengths with narrow zero-phonon lines
Confirmed spin activity and room-temperature stability
Zero-field splitting ranges from 1.0 to 1.4 GHz
Abstract
A photoluminescence (PL) and magnetic resonance investigation of a defect in chlorine-implanted 4H-SiC is presented. This Cl-related center emits light at telecom wavelengths with zero-phonon lines in the range 1350-1540 nm. Its four configurations exhibit stable PL spectra characterized by narrow zero-phonon lines. For the two configurations that emit light at the C-band, a Debye-Waller factor in the range 22-25% is estimated. Optically detected magnetic resonance confirms that the Cl-related center is spin active and stable at room temperature with the zero-field splitting in the range of 1.0-1.4 GHz. The combined optical and spin properties suggest this center to be a highly promising candidate for scalable quantum networks.
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Taxonomy
TopicsSilicon Nanostructures and Photoluminescence · Silicon Carbide Semiconductor Technologies · Diamond and Carbon-based Materials Research
