Design principles for III-nitride-nanocluster photocatalysts from region-resolved electronic structure
Shuaishuai Yuan, Gunther G. Andersson, Gregory F. Metha, Zetian Mi, Hong Guo

TL;DR
This study develops design principles for nanocluster cocatalysts on III-nitride semiconductors by analyzing their electronic structure and interfacial electrostatics, aiding the rational design of efficient photocatalytic interfaces.
Contribution
It introduces a region-resolved electronic structure framework and machine learning models to understand and optimize nanocluster-semiconductor interfaces for photocatalysis.
Findings
Nanocluster-covered regions control charge injection and band bending.
Surface states facilitate surface activation in uncovered nitride regions.
Interfacial electrostatics influence cocatalyst effectiveness.
Abstract
Understanding how nanocluster cocatalysts modify the electronic structure of III-nitride surfaces is central to the rational design of efficient photocatalytic interfaces. Here, we establish design principles for nanocluster cocatalysts on GaN-based semiconductors by systematically analyzing the spatially resolved electronic structure of GaN-, InGaN-, and ScGaN-based slabs decorated with six-atom elemental nanoclusters. Using a region-resolved projected local density of states (PLDOS) framework, we reveal that semiconductor-nanocluster interfaces operate as laterally heterogeneous electronic systems, in which nanocluster-covered regions govern charge injection and band bending, while uncovered nitride regions retain surface states that facilitate surface activation. We further show that cocatalyst effectiveness is controlled not only by hydrogen adsorption energy, but also by…
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Taxonomy
TopicsMachine Learning in Materials Science · 2D Materials and Applications · GaN-based semiconductor devices and materials
