Electronic Structure of Epitaxial Films of the Bilayer Strontium Ruthenate: Sr$_{3}$Ru$_2$O$_{7}$
Sethulakshmi Sajeev, Arnaud P. Nono Tchiomo, Brendan D. Faeth, Evan Krysko, Olivia Peek, Matthew J. Barone, Jordan Shields, Neha Wadehra, Garu Gebreyesus, Divine Kumah, Richard M. Martin, Darrell G. Schlom, and Prosper Ngabonziza

TL;DR
This study combines ARPES measurements and density functional theory to explore how substrate-induced strain affects the electronic band structure and Fermi surface topology of epitaxial Sr$_3$Ru$_2$O$_7$ films, revealing strain-dependent electronic features.
Contribution
First combined experimental and theoretical analysis of the low-energy electronic structure of epitaxial Sr$_3$Ru$_2$O$_7$ films under different strain conditions.
Findings
Strain induces significant changes in Fermi surface topology.
Films on SrTiO$_3$ are tensile strained with tetragonal symmetry.
Films on (LaAlO$_3$)$_{0.3}$(Sr$_2$TaAlO$_6$)$_{0.7}$ are compressively strained with orthorhombic symmetry.
Abstract
We report the first combined study of the low-energy electronic band structure of epitaxial SrRuO films using angle-resolved photoemission spectroscopy and density functional theory. The complete Fermi-surface topography of the near-Fermi-level bands is determined from in-situ ARPES measurements. To investigate the effects of substrate-induced strain on the band structure, SrRuO thin films are epitaxially grown on SrTiO and (LaAlO)(SrTaAlO) substrates using molecular beam epitaxy. The combination of the measured Fermi-surfaces along with the theoretical interpretation, clearly show dramatic changes in the Fermi surface topologies that result from the underlying strain states of the films on the two substrates. We find that the SrRuO films prepared on SrTiO are tensile strained with tetragonal symmetry, whereas…
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Taxonomy
TopicsElectronic and Structural Properties of Oxides · Advanced Condensed Matter Physics · Magnetic and transport properties of perovskites and related materials
