Efficient and Robust p-type Transistor based on Ultra-wide-bandgap Semiconductor

TL;DR

This paper reports a novel p-type transistor using ultra-wide-bandgap hydrogenated diamond and high-k dielectric, achieving high stability, efficiency, and tunability for advanced electronic applications.

Contribution

The work introduces a heterogeneously integrated p-type transistor with ultra-wide-bandgap semiconductor and high-k dielectric, demonstrating superior performance and robustness.

Findings

High on-current (~200 mA/mm) at room temperature

Low subthreshold swing (70 mV/dec) and high hole mobility (~570 cm^2/Vs)

Operation tunable between enhancement and depletion modes

Abstract

The p-type transistor is an indispensable component of semiconductor technology, enabling complementary operation with n-channel transistors for computation, storage, and communication. Achieving both high robustness and high efficiency is highly desirable but challenging for p-type transistors due to limited semiconductors with reliable hole transport and their high activation energies. Here, we achieved a robust yet efficient p-type transistor by heterogeneously integrating an ultra-wide-bandgap semiconductor and a high-k dielectric layer through van der Waals integration. The p-type transistor employs a two-dimensional hole channel on hydrogenated diamond (bandgap 5.6 eV) combined with a high-k (30.5) SrTiO3 perovskite membrane. At room temperature, the transistor exhibits stable operation with a high on-current (~200 mA/mm), low subthreshold swing (70 mV/dec), high hole mobility (566 cm^2/Vs to 572 cm^2/Vs) and high on-off ratio (~10^9). Furthermore, tuning annealing temperature allows operation in either enhancement or depletion mode. The robust p-type transistor with high efficiency holds great potential for future power electronics, UV optoelectronics, and harsh-environment electronic applications.