Substrate-Voltage-Controlled Temporal Nonlinearity in Ferroelectric FET-based Reservoir Computing
Eishin Nako, Ryosho Nakane, Mitsuru Takenaka, Kasidit Toprasertpong, and Shinichi Takagi

TL;DR
This paper presents a ferroelectric FET-based reservoir computing system that enhances temporal and spatial nonlinearity by utilizing both gate and substrate inputs, improving processing of complex time-series data.
Contribution
It introduces substrate input control in FeFETs to augment nonlinearity and memory, enabling more diverse internal states for reservoir computing.
Findings
Enhanced short-term memory and nonlinearity in FeFET reservoir system
Improved feature extraction from complex time-series data
Demonstrated energy-efficient and flexible reservoir computing platform
Abstract
Physical reservoir computing exploits inherent nonlinearity and short-term memory of physical dynamics to achieve efficient processing of time-series data with extremely-low training cost. In this study, we demonstrate a ferroelectric field-effect transistor (FeFET)-based reservoir computing system with augmented temporal and spatial nonlinearity by utilizing both gate and substrate terminals as inputs. The ferroelectric polarization state in the next time step can additionally be controlled by modifying the electric field distribution in the gate stack of FeFET through a substrate input, enabling more diverse internal states compared with the case where inputs are applied only to the gate. To introduce a nonlinearity in the time domain, we introduce a delay between a gate input and a substrate input, which facilitates efficient nonlinear mixing between the current and past inputs. As a…
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Taxonomy
TopicsFerroelectric and Negative Capacitance Devices · Neural Networks and Reservoir Computing · Advanced Memory and Neural Computing
