Disorder-induced symmetry breaking in moir\'e bands of marginally twisted bilayer MoS$_2$
Pablo Res\'endiz-V\'azquez, Christophe de Beule, Thi-Hai-Yen Vu, Kaijian Xing, Daniel McEwen, Daniel Bennett, Liangtao Peng, H\'ector Gonz\'alez-Herrero, Shaffique Adam, Mark T. Edmonds, Michael S. Fuhrer

TL;DR
This study reveals how electrostatic disorder significantly influences the electronic properties of marginally twisted bilayer MoS₂, demonstrating the importance of disorder effects in moiré materials through combined experimental and theoretical analysis.
Contribution
It provides the first detailed investigation of electrostatic disorder effects on moiré bands in twisted bilayer MoS₂ using scanning tunneling spectroscopy and continuum modeling.
Findings
Disorder causes energy shifts of about 15 meV in band onset energies.
Spatially correlated disorder aligns with a background charge density of 10^{11} cm^{-2}.
Disorder effects are crucial for understanding the electronic structure at the nanoscale.
Abstract
Twisted transition-metal dichalcogenides host highly tunable moir\'e potentials, flat bands, and correlated electronic phases, yet the role of disorder in shaping these emergent properties remains largely unresolved. Using scanning tunneling spectroscopy, we investigate the impact of electrostatic disorder on the electronic structure of marginally twisted () bilayer MoS. Differences of 15 meV in the onset energies of the valence and conduction bands between MX- and XM-stacked regions are observed and are unexpected based on symmetry considerations. We further observe spatially correlated disorder in the band onset energy that is consistent with a background random charge density of a few . Continuum model calculations for twisted MoS reveal dramatic changes in the low-energy moir\'e bands in response to an electric…
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Taxonomy
Topics2D Materials and Applications · Graphene research and applications · Chemical and Physical Properties of Materials
