Ferroelectricity in Atomically Thin Metallic TaNiTe$_5$ with Ultrahigh Carrier Density
Zhihua Liu, Shichong Song, Xunqing Yin, Chenhang Xu, Feng Liu, Guohua Wang, Peng Chen, Shengwei Jiang, Chunqiang Xu, Xiaofeng Xu, Weidong Luo, and Dong Qian

TL;DR
This paper demonstrates the coexistence of ferroelectricity and ultrahigh carrier density in atomically thin TaNiTe5, challenging traditional views and opening new avenues for 2D ferroelectric metals.
Contribution
It introduces a new 2D ferroelectric metal with high carrier density, showing ferroelectricity persists at atomic thickness with potential for novel electronic applications.
Findings
Robust ferroelectricity observed in monolayer TaNiTe5 at room temperature
Structural evidence links ferroelectricity to Te atom displacement
Carrier density comparable to copper, coexisting with ferroelectricity
Abstract
Ferroelectric metals, characterized by the coexistence of ferroelectricity and metallic conductivity, present a fundamental challenge due to the screening effect of free charge carriers on the long-range electric dipole order. Existing strategies to circumvent this obstacle include employing two-dimensional (2D) crystals, where reduced dimensionality and low carrier densities suppress screening, or designing materials of van der Waals (vdW) superlattice with spatially separated and decoupled conductive and nearly insulating ferroelectric layers. Here, we report an alternative paradigm in TaNiTe5, where an ultrahigh carrier density coexists with an out-of-plane ferroelectric order within the same surface monolayer. Using piezoresponse force microscopy (PFM), we observed robust ferroelectric behavior in TaNiTe5 down to single-unit-cell thickness (~1.3 nm) at room temperature. Scanning…
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Taxonomy
Topics2D Materials and Applications · Chemical and Physical Properties of Materials · Topological Materials and Phenomena
