Effect of Local Topological Changes on Resistance in Tunably-Disordered Networks
Chenxi Wang, Charles Emmett Maher, and Katherine A. Newhall

TL;DR
This study examines how small local topological changes in disordered networks, specifically Delaunay flips, cause significant variations in electrical resistance measurements near source or sink nodes, emphasizing the importance of local topology.
Contribution
It reveals that local topological changes like Delaunay flips significantly affect resistance measurements, providing analytical insights into their impact on electrical transport in disordered networks.
Findings
Delaunay flips cause large resistance jumps near source or sink.
Global resistance is less affected by local topological changes.
Local topological effects are crucial for understanding transport in finite disordered networks.
Abstract
Disordered materials occur naturally and also provide a broader design space than ordered or crystalline structures. We investigate a two-dimensional disordered network metamaterial constructed from a Delaunay triangulation of an underlying point cloud. Small perturbations in the point cloud induce discrete topological changes. One such change we identify is a Delaunay flip, in which two neighboring Delaunay triangles that form a convex quadrilateral structure with their common edge being one of the two quadrilateral diagonals exchange this diagonal for the other diagonal. These topological changes can cause substantial jumps in the effective resistance measured diagonally across the network, when the change is located near the source or the sink node. The jumps are explained analytically by showing that the change in effective resistance from edge removal or addition depends on the…
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Taxonomy
TopicsTopological Materials and Phenomena · Complex Network Analysis Techniques · Graphene research and applications
