ZnCdO:Eu Epitaxially Grown Alloys for Self-Powered Ultrafast Broadband Photodetection
Igor Perlikowski, Eunika Zielony, Aleksandra Wierzbicka, Anastasiia Lysak, Rafal Jakiela, Ewa Przezdziecka

TL;DR
This study demonstrates self-powered, ultrafast broadband photodetectors using Eu-doped ZnCdO alloys grown by MBE, leveraging pyro-phototronic effects for rapid response without external power.
Contribution
First demonstration of Eu-doped ZnCdO alloys grown by MBE for self-powered, ultrafast broadband photodetectors utilizing pyro-phototronic effects.
Findings
Eu doping enhances growth kinetics and orientation.
Cd alloying eliminates Schottky barrier issues.
Devices achieve sub-10 microsecond response times across 380-1150 nm.
Abstract
Photodetectors (PDs) are essential in imaging, communication, and sensing technologies. However, their reliance on external power makes them energy-consuming. This creates a strong need for self-powered PDs as a sustainable alternative. ZnO is a promising semiconductor material due to its pyroelectric properties, stemming from non-centrosymmetric wurtzite crystal structure, enabling the pyro-phototronic effect that enhances response speed. Properties of ZnO can be tailored via alloying and doping. Thus, this work explores thin layers of ZnCdO:Eu random alloys grown by molecular beam epitaxy (MBE) on silicon substrates, with varying Cd content. The study shows that doping with Eu notably affects growth kinetics, promoting strong [0001] orientation preference. Moreover, photoluminescence measurements confirm the successful incorporation of Eu3+ ions into the structure. Electrical…
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