Electronic band structure and exciton properties of $Pna2_1$ CaSnN$_2$
Ilteris K. Turan, Sarker Md. Sadman, Walter R. L. Lambrecht

TL;DR
This study calculates the electronic and excitonic properties of CaSnN$_2$ with a $Pna2_1$ structure, revealing its potential for blue LEDs and analyzing strain effects on its band structure.
Contribution
It provides the first detailed quasiparticle and excitonic analysis of CaSnN$_2$, highlighting its suitability for blue light emission and strain-tunable properties.
Findings
CaSnN$_2$ has a direct band gap of 2.59 eV at $b$
Valence band splitting and effective masses are characterized
Strain reverses the crystal field splitting between $a_1$ and $b_1$ states
Abstract
The electronic band structure of CaSnN in the wurtzite-based structure is calculated using the Quasiparticle Self-consistent (QS)GW method, including ladder diagrams in the screened Coulomb interaction W and is found to have a direct gap of 2.59 eV at {\Gamma}, which corresponds to blue light wavelength of 478 nm and makes it an attractive candidate for sustainable blue light-emitting diodes (LEDs), avoiding Ga and In. The valence band splitting is analyzed in terms of symmetry labeling, and the effective mass tensor is calculated for several bands at {\Gamma}. The valence band maximum has a1 symmetry and gives allowed transitions to the conduction band minimum for light polarized along the {\bf c}-direction. While this is unfavorable for light emission with transverse electric (TE) or s-polarization from the basal plane, this would not be an impediment if…
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