Optical detection of the quantum Hall effect in silicon nanostructures

TL;DR

This paper reports optical detection of quantum Hall effects in silicon nanostructures, revealing high-temperature quantum phenomena through electroluminescence spectra linked to Landau quantization and fractional resistance states.

Contribution

It demonstrates a novel optical method to observe quantum Hall effects in silicon nanostructures, highlighting the role of electroluminescence spectra and fractional resistance states at high temperatures.

Findings

Electroluminescence spectra reveal quantum Hall features.

Observation of fractional resistance quantum staircases.

Detection of Landau quantization effects via optical signals.

Abstract

Electroluminescence spectra of a silicon nanostructure with edge channels covered by chains of dipole centers with negative correlation energy are demonstrated. The presence of such chains provides conditions for nondissipative transport of single charge carriers at high temperatures up to room temperature. Due to the suppression of the electron-electron interactions, the macroscopic quantum phenomena such as Shubnikov - de Haas oscillations and the quantum staircase of Hall resistance are consistent with the positions of the spectral peaks of the detected electroluminescence. The obtained results are considered in the framework of Faraday electromagnetic induction, which indicates that Landau quantization leads to the emergence of induced irradiation similar to Josephson and Andreev generation. Moreover, the detected maxima in the spectral characteristics correspond to odd fractional values of the resistance quantum staircases, while the dips in the electroluminescence spectra are observed at even fractional values of the resistance quantum ladder, which is due to the increased formation of composite bosons and fermions, respectively.