Fabrication and Characterization of p-type Inverted Coaxial Point Contact (ICPC) Detectors with a-Ge Dual-Blocking Contacts
S.A. Panamaldeniya, K.M. Dong, and D.M. Mei

TL;DR
This paper reports the development of p-type inverted coaxial point contact germanium detectors with novel thin amorphous-germanium dual-blocking contacts, demonstrating stable operation, good energy resolution, and geometry-dependent charge collection for low-background applications.
Contribution
First implementation of thin a-Ge dual-blocking contacts on ICPC HPGe detectors, enabling stable operation and improved spectroscopic performance.
Findings
Stable operation with picoampere-level leakage currents.
Superior energy resolution at key gamma-ray energies.
Geometry affects depletion and charge-collection uniformity.
Abstract
We report the fabrication and characterization of two p-type inverted coaxial point contact (ICPC) high-purity germanium (HPGe) detectors, SAP16 and SAP17, produced from USD-grown crystals with net impurity concentrations of . Both devices employ \emph{thin} amorphous-germanium (a-Ge) dual-blocking contacts, implemented here for the first time on ICPC detectors, to provide bipolar charge blocking while limiting dead-layer thickness. Electrical tests at 76~K demonstrate stable operation with picoampere-level leakage currents and sub-pF capacitance: SAP17 reached ~pA at the maximum tested bias (500~V) and operated stably at 400~V with ~pF. \emph{Meanwhile,} SAP16 achieved superior spectroscopic performance, with energy resolutions of 2.42\% at 59.5~keV and 0.36\% at 662~keV. Gamma-ray spectroscopy with Am and…
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Taxonomy
TopicsSuperconducting and THz Device Technology · Particle Detector Development and Performance · Advanced Semiconductor Detectors and Materials
