Towards Polyoxometalate Nanoelectronics

TL;DR

This review summarizes over 30 years of research on polyoxometalates in nanoelectronics, highlighting their structural-electronic relationships and potential applications in memory, spintronics, quantum computing, and neuromorphic devices.

Contribution

It provides a comprehensive analysis of experimental findings on polyoxometalate electronic transport and discusses future challenges and opportunities in nanoelectronic applications.

Findings

Polyoxometalates exhibit tunable electronic properties suitable for various nanoelectronic devices.

Structural features significantly influence the electronic behavior of polyoxometalate-based devices.

Polyoxometalates show promise in memory, spintronics, quantum bits, and neuromorphic computing.

Abstract

Polyoxometalates form a large family of molecular oxide clusters of the early transition metals with unique and tunable properties (multi-redox, thermal and chemical robustness, magnetic). We review more than 30 years of experimental research on the electron transport properties of polyoxometalates devices, from thin films and self-assembled monolayers down to single-molecule junctions. We focus on the relationship between the polyoxometalate structures (structural type, nature of metals and heteroatoms, role of the counterions, redox states, electrode linkers and functional ligands) and the electronic structures of the polyoxometalate-based devices (energy positions of the molecular orbitals, energy offset at the interfaces). Then, we critically discuss the performances of polyoxometalates in nanoelectronics devices: capacitance and resistive switching memories, spintronics, quantum bits and neuromorphic devices. We conclude with a discussion about pending issues and perspectives.