Accelerating Physics-Based Electromigration Analysis via Rational Krylov Subspaces
Sheldon X.-D. Tan, Haotian Lu

TL;DR
This paper introduces two rational Krylov subspace methods for fast, accurate electromigration stress analysis in VLSI interconnects, significantly reducing computational cost while maintaining high precision.
Contribution
It develops novel frequency- and time-domain rational Krylov techniques with automatic shift time optimization for efficient EM analysis, outperforming traditional methods.
Findings
Achieves 20-500x speedup over finite-difference methods.
Maintains sub-0.1% error in key metrics with only 4-6 Krylov orders.
Requires significantly fewer Krylov orders than standard methods.
Abstract
Electromigration (EM) induced stress evolution is a major reliability challenge in nanometer-scale VLSI interconnects. Accurate EM analysis requires solving stress-governing partial differential equations over large interconnect trees, which is computationally expensive using conventional finite-difference methods. This work proposes two fast EM stress analysis techniques based on rational Krylov subspace reduction. Unlike traditional Krylov methods that expand around zero frequency, rational Krylov methods enable expansion at selected time constants, aligning directly with metrics such as nucleation and steady-state times and producing compact reduced models with minimal accuracy loss. Two complementary frameworks are developed: a frequency-domain extended rational Krylov method, ExtRaKrylovEM, and a time-domain rational Krylov exponential integration method, EiRaKrylovEM. We show that…
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Taxonomy
TopicsCopper Interconnects and Reliability · Electronic Packaging and Soldering Technologies · Advancements in Photolithography Techniques
