Enhanced detection of circularly polarized photons with topological materials

TL;DR

This paper develops a new computational approach using a nonlinear Kubo formalism and tight-binding models to analyze the second-order nonlinear optical responses of topological insulators, revealing how device modifications influence circularly polarized light detection.

Contribution

It introduces a layer-resolved nonlinear optical conductivity calculation method for topological insulators, enabling detailed analysis of device engineering effects on optical responses.

Findings

Photogalvanic current is sensitive to electric field, Fermi level, and incident light energy.

Computed mid-IR responsivity is comparable to existing TI and 2D-material photodetectors.

Proximitizing magnetic fields can tune the circular photogalvanic effect.

Abstract

Topological insulators (TI) are highly attractive platforms for next-generation optoelectronic and photonic devices. Spin-momentum locking of topological surface states enhance their nonlinear optical responses and sensitivities, especially to circularly polarized light. Until now, theoretical investigations of nonlinear responses in TIs have been limited to microscopic calculations on analytical continuum models, or leveraging density functional theory based Hamiltonians. In this work, we expand beyond these two approaches by employing a nonlinear Kubo formalism to calculate second-order nonlinear optical conductivity in a slab geometry using symmetry informed tight binding models that accurately reproduce the conduction, valence and topological surface bands in Bi$_2$Se$_3$. Our methodology enables us to study the layer resolved contribution to injection-currents coupled to the incident electric field. We demonstrate that our technique can reveal how device engineering modifies elements of the nonlinear optical response such as the circular photogalvanic effect by breaking inversion and time-reversal symmetry. We find, in line with experiments, that the photogalvanic current is sensitive to field effects, Fermi level energy, gate voltage and the energy of incident light. Our computed midwavelength infrared (mid-IR) responsivity $R \approx 0.169~\mathrm{\mu A/W}$ is comparable to reported TI and intrinsic 2D-material photodetectors. We further simulate experimentally unexplored methods to modify the circular photogalvanic effect such as proximitizing a magnetic field to one of the TI surface materials, suggesting a mechanism for optoelectronic tuning.