Gate-tuneable single-photon emitters in WSe2 monolayer created via AFM nanoindentation on rigid SiO2/Si substrates
Ajit Kumar Dash (1), Sanket Jugade (2), Manavendra Pratap Singh (2), Hardeep (1), Tilly Guyot (3), Cora Crunteanu-Stanescu (3), Indrajeet Dhananjay Prasad (4), Yunus Waheed (4), Sumitra Shit (4), S\'ebastien Roux (3), Santosh Kumar (4), Cedric Robert (3), Xavier Marie (3, 5)

TL;DR
This paper demonstrates a reliable method to create stable, tunable single-photon emitters in monolayer WSe2 on SiO2/Si substrates using AFM nanoindentation, advancing scalable quantum photonic applications.
Contribution
It introduces a deterministic protocol for creating SPEs in 2D materials via controlled nanoindentation, enabling integration with photonic circuits.
Findings
SPEs are stable up to ~120K with sharp defect peaks in PL spectra.
76% of nanoindented sites exhibit defect-bound peaks confirmed by various PL measurements.
Electrical gating allows switching and tuning of SPE emission properties.
Abstract
Single-photon emitters (SPEs) hosted by two-dimensional (2D) semiconducting materials are envisioned for next-generation quantum applications. However, SPE creation in 2D semiconductors on rigid substrates like SiO2/Si via nanoindentation is a technological gap, critical for interfacing SPEs with photonic circuits and cavities. Here, we report a protocol for deterministically creating SPEs in monolayer WSe2 on SiO2/Si substrates using a sharp diamond AFM (atomic force microscope) tip. A displacement-controlled indentation process is developed, allowing indent depths > 150 nm necessary for creating SPEs. Sharp defect peaks (~200 {\mu}eV) are observed in cryogenic (4K) photoluminescence (PL) spectrum at nanoindented sites and are stable upto ~ 120K. 76% of sites exhibit sharp defect-bound peaks confirmed by power-dependent, temperature-dependent, and time-resolved PL (TRPL). AFM and PL…
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Taxonomy
Topics2D Materials and Applications · Diamond and Carbon-based Materials Research · Nonlinear Optical Materials Studies
