Rapid high-temperature initialisation and readout of spins in silicon with 10 THz photons

TL;DR

This paper demonstrates that using 10 THz photon pulses enables rapid initialization and readout of spins in silicon, significantly faster than traditional microwave methods, at temperatures above 3 K.

Contribution

It introduces a novel optical pumping technique with THz photons for fast spin initialization and readout in silicon, surpassing microwave-based methods in speed.

Findings

Achieves 99% spin initialization within 250 ps at 3 K.

Uses 10 THz photon pulses for spin state manipulation.

Potentially applicable to other solid-state quantum systems.

Abstract

Each cycle of a quantum computation requires a quantum state initialisation. For semiconductor-based quantum platforms, initialisation is typically performed via slow microwave processes and usually requires cooling to temperatures where only the lowest quantum level is occupied. In silicon, boron atoms are the most common impurities. They bind holes in orbitals including an effective spin-3/2 ground state as well as excited states analogous to the Rydberg series for hydrogen. Here we show that initialisation temperature demands may be relaxed and speeds increased over a thousand-fold by importing, from atomic physics, the procedure of optical pumping via excited orbital states to preferentially occupy a target ground state spin. Spin relaxation within the orbital ground state of unstrained silicon is too fast to measure for conventional pulsed microwave technology, except at temperatures below 2 K, implying a need not only for fast state preparation but also fast state readout. Circularly polarised ~10 THz photon pulses from a free electron laser meet both needs at temperatures above 3 K: a 9 ps pulse enhances the population of one spin eigenstate for the "1s"-like ground state orbital, and the second interrogates this imbalance in spin population. Using parameters given by our data, we calculate that it should be possible to initialise 99% of spins for boron in strained silicon within 250 ps at 3 K. The speedup of both state preparation and measurement gained for THz rather than microwave photons should be explored for the many other solid state quantum systems hosting THz excitations potentially useful as intermediate states.