Tunneling probe-based identification of the sp${}^3$ dangling bond on the H-C(100):$2\times1$ surface

TL;DR

This paper develops a combined experimental and theoretical framework using scanning tunneling spectroscopy to identify and characterize sp^3 dangling bonds on the H-terminated (100) diamond surface, crucial for advancing diamond quantum technologies.

Contribution

It introduces a novel method for reliably detecting sp^3 dangling bonds on diamond surfaces, enabling precise control for quantum device fabrication.

Findings

Established a comprehensive STS-based identification protocol.

Validated the approach with experimental and theoretical data.

Facilitated future atomic-scale manipulation of dangling bonds.

Abstract

The sp${}^3$ dangling bond on the diamond surface plays a critical role in the performance and fabrication of diamond quantum technologies. For the former, the magnetic and electric properties of this defect can impede the performance of quantum sensors and computers. For the latter, the chemical properties of the dangling bond are integral to proposed methods for bottom-up fabrication of scalable diamond quantum devices. In pursuit of high performance and scalable diamond quantum technology, tunneling probe-based techniques offers the ability to create and modify the sp${}^3$ dangling bond with atomic-scale precision. However, these capabilities cannot be realised either deterministically or at scale without a means for identifying the sp${}^3$ dangling bond amidst the myriad of other defects on the diamond surface. Consequently, in this work we provide a comprehensive experimental and theoretical framework for STS-based characterisation of the sp${}^3$ defect on the H-terminated (100) diamond surface. This capability provides the foundation for future tunneling probe studies in the modification of dangling bonds.