Epitaxial Ni/Cu Superlattice Nanowires with Atomically Sharp Interfaces for Spin Transport

TL;DR

This paper reports the successful fabrication of epitaxial Ni/Cu superlattice nanowires with atomically sharp interfaces, enabling improved spin transport properties crucial for advancing nanoscale spintronic devices.

Contribution

It demonstrates the first controlled nanoscale heteroepitaxy in one-dimensional single-crystal structures with precise atomic stacking of Ni and Cu segments.

Findings

Achieved epitaxial, atomically sharp Ni/Cu interfaces in nanowires.

Reduced electron scattering enhances magnetotransport properties.

Potential for improved nanosensors and spintronic devices.

Abstract

The importance of microstructure increases when decreasing the size of an object to the nanoscale, along with the complexity of controlling it. For instance, it is particularly complicated to create nano-object with controlled interfaces. Therefore, progressing towards 1D epitaxial nanostructures poses a challenge, and realization of their full potential is linked to technological issues of achieving large-scale, precise atom stacking of two or more different chemical elements. Achieving such coherent, epitaxial interfaces is a key step toward enabling spintronic phenomena in 1D objects, by minimizing interface scattering and strain-driven defects. Our results demonstrate a successful realization of controlled nanoscale heteroepitaxy in one-dimensional single-crystal structures. We fabricated nanowires composed of alternating magnetic (nickel) and non-magnetic, highly conductive (copper) segments. This periodic stacking modulates electron transport under magnetic stimuli. The epitaxial precision achieved eliminates detrimental electron scattering that has historically limited the magnetotransport properties of such 1D structures and hindered their development. Such materials are crucial for further advancements in the miniaturisation of nanosensors, actuators, and next-generation 3D spintronic devices.