Interband State Transfer in Double-Gated Bilayer Graphene at High Electric Field
Margherita Melegari, Brian Skinner, Ignacio Gutierrez-Lezama, Alberto F. Morpurgo

TL;DR
This study explores the effects of high electric fields on bilayer graphene using double ionic gating, revealing new in-gap state phenomena and transport behaviors when the interlayer potential exceeds the interlayer coupling energy.
Contribution
It demonstrates the ability to reach large interlayer potential differences in bilayer graphene and uncovers novel in-gap state phenomena at high electric fields.
Findings
Sharp change in resistance peak slope at Δ ≈ t⊥
Splitting and sign reversals in Hall resistance at high Δ
Emergence of hysteresis in transport measurements
Abstract
The band structure of Bernal-stacked bilayer graphene can be tuned using double-gated transistors to apply a perpendicular electric field that generates an interlayer potential energy difference . Dielectric breakdown limits the operation of conventional devices to the meV regime. We employ double ionic gating to reach fields past V/nm, for which . We find that for , the evolution of the longitudinal resistance () peak as a function of applied gate voltages undergoes a sharp change in slope, exhibiting a pronounced "knee". Increasing past the "knee" results in an unusual evolution transport properties: the peak in decreases in magnitude, it exhibits a splitting concomitant with multiple sign reversals of the Hall resistance, and hysteresis in the peak position emerges. We…
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Taxonomy
TopicsGraphene research and applications · 2D Materials and Applications · Topological Materials and Phenomena
