Engineering Photoluminescence with Mie Voids
Yuchao Fu, Ilia Lykov, Sergejs Boroviks, Nai-Quan Zhu, Tianyue Li, Siarhei Zavatski, Makhlad Chahid, Olivier J. F. Martin

TL;DR
This paper introduces silicon Mie voids to independently control excitation enhancement and quantum yield in photoluminescence, validated through simulations and experiments, enabling advanced nanophotonic devices and encrypted displays.
Contribution
The work demonstrates a novel Mie void design that allows independent tuning of emission properties at the nanoscale, minimizing optical losses and enabling multimodal nanophotonic patterning.
Findings
Validated the independent control of excitation and emission enhancement.
Achieved near-diffraction-limited pixel encoding of logos in multiple optical modes.
Confirmed accelerated radiative decay via modified optical LDOS.
Abstract
Spontaneous emission, as a fundamental radiative process and a versatile information carrier, plays a vital role in light-emitting devices, optical information modulation and encryption, super-resolution fluorescence imaging. Engineering the photonic environment surrounding photon emitters enables control over their emission properties. However, simultaneously achieving precise engineering of both excitation enhancement and quantum-yield modulation at the nanoscale remains elusive, highlighting substantial room for advancing the precise orchestrating of photoluminescence. Here, we introduce silicon Mie voids - air-defined cavities that invert the conventional solid-particle geometry - to achieve independent tuning of photoluminescence within a single subwavelength unit, while minimizing optical losses. Full-wave simulations and experiments on both gradient and uniform Mie-void arrays…
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