Thermally-Activated Epitaxy of NbO
Sandra Glotzer, Jeong Rae Kim, Joseph Falson
TL;DR
This paper presents a high-temperature epitaxial growth method for NbO films, showing improved structural and electrical properties, and highlights the importance of temperature control in synthesizing refractory metal compounds.
Contribution
It introduces a thermally-activated epitaxy process for NbO at over 1000°C, demonstrating reproducible high-quality films and analyzing their electrical properties.
Findings
NbO films exhibit superior structural properties.
Electrical properties of NbO are characterized and discussed.
High temperatures enable better synthesis of refractory metal compounds.
Abstract
We demonstrate a thermally-activated epitaxy window for the growth of NbO at temperatures exceeding 1000 C. NbO films grown in this mode display superior structural and transport properties, which are reproducible across a window of oxygen partial pressure. Through comprehensive analysis, we propose the prototypical electrical properties of NbO, for which a consensus has not yet been made. This study unequivocally demonstrates the utility of high temperatures in the thin film synthesis of refractory metal compounds.
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