Synergy of fivefold boost SOT efficiency and field-free magnetization switching with broken inversion symmetry: Toward neuromorphic computing
Badsha Sekh, Hasibur Rahaman, Subhakanta Das, Mitali, Ramu Maddu, Kesavan Jawahar, S.N. Piramanayagam

TL;DR
This paper demonstrates a significant enhancement in spin orbit torque efficiency and field-free magnetization switching by integrating Ruthenium Oxide, enabling practical, energy-efficient neuromorphic computing with high neural network accuracy.
Contribution
The study introduces a novel RuO2 layer to boost SOT efficiency and achieve field-free switching, advancing neuromorphic computing hardware.
Findings
5.2 times increase in SOT efficiency with RuO2 layer
Threefold reduction in switching current density
Achieved high image recognition accuracy (~95%) on MNIST datasets
Abstract
Non-volatile Neuromorphic Computing (NC) elements utilizing Spin Orbit Torque (SOT) provide a viable solution to alleviate the memory wall bottleneck in contemporary computing systems. However, the two challenges, low SOT efficiency and the need for in plane symmetry breaking field for perpendicular magnetization switching, greatly limit its practical implementation. In this work, the enhanced SOT efficiency of Platinum (Pt) SOT layer and field free perpendicular magnetization switching are achieved by integrating thin Ruthenium Oxide (RuO2) layer in our material stack. The optimal RuO2 thickness (0.5 nm) enhances 5.2 times Damping Like (DL) SOT efficiency compared with pure SOT layer (Pt), as determined by hysteresis loop shift measurements, with a relatively low resistivity (90 micro-Ohm-cm). Moreover, we achieve 3 times reduction of critical magnetization switching current density…
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Taxonomy
TopicsMagnetic properties of thin films · Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices
