Theory of Next-Generation Even-Denominator States
Misha Yutushui, David F. Mross

TL;DR
This paper develops a comprehensive theory for next-generation even-denominator quantum Hall states, analyzing their quasiparticles, edge transport, and wavefunctions, and compares their properties to existing models, revealing their stability and energetic preferences.
Contribution
It introduces a theoretical framework for understanding new even-denominator quantum Hall states, including flux attachment effects and phase stability analysis.
Findings
Next-generation states are energetically favored in the lowest Landau level.
Quasiparticles in these states have identical charges and exchange statistics as Bonderson-Slingerland states.
Topological stability of interface modes remains invariant under flux attachment.
Abstract
Even-denominator quantum Hall states are leading candidates for realizing non-Abelian topological orders, with the plateau in GaAs the first and most-studied example. Recent experiments in GaAs and bilayer graphene (BLG) have observed many `next-generation' even-denominator states at filling factors such as , , and . We develop the theory of these states, including analyses of their bulk quasiparticles, of methods for distinguishing between pairing channels in edge transport measurements, and of their trial wavefunctions. As part of this study, we derive general relations of how flux attachment affects many universal properties of states. In particular, we prove that the topological stability of interface modes is invariant under flux attachment. We compare next-generation paired states to Bonderson-Slingerland states at the…
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Taxonomy
TopicsQuantum and electron transport phenomena · Topological Materials and Phenomena · Advanced Physical and Chemical Molecular Interactions
