Ring oscillator performance of the ATLAS inner tracker pixel readout chip

TL;DR

This study characterizes the performance of ring oscillators in 65-nm CMOS technology for ATLAS ITk pixel readout chips through experiments and simulations under various conditions.

Contribution

It provides comprehensive experimental and simulation data on ring oscillator behavior in the context of high-energy physics detector electronics.

Findings

RO output varies with temperature, voltage, and radiation dose.

Simulation results align well with experimental data.

Insights aid in optimizing RO design for detector applications.

Abstract

This paper presents experimental and simulation data to characterize the Ring Oscillators (RO) produced in 65-nm CMOS technology for the next promising generation of readout chips for the pixel detector in the Inner Tracker (ITk) at the ATLAS experiment at CERN. To enable a better understanding of the RO block embedded in ITkPixV1.1 single chip card (SCC), tests at various temperatures, voltages, accumulated total ionizing dose (TID) with X-ray irradiation, and high-temperature annealing will be presented. The objective of this study is to examine the RO output dependency based on different variable conditions and provide simulation data using Cadence, an electronic design automation (EDA) software to validate the experimental outcomes.