Significance of the dispersion force for ferroelectric switching in ZnO and related materials
Lingyao Zhang, Musen Li, Nisha Metha, Carla Verdi, Wei Ren, and Jeffrey R. Reimers

TL;DR
This study investigates how dispersion forces influence ferroelectric switching in ZnO and related materials, revealing that accurate dispersion modeling is crucial for understanding polarization behavior in these systems.
Contribution
It provides a comprehensive analysis of the role of dispersion interactions in stabilizing intermediate phases during ferroelectric switching in ZnO-based materials, using multiple advanced computational methods.
Findings
Dispersion interactions are critical for modeling ferroelectric switching.
h-ZnO's stability is heavily influenced by dispersion corrections.
h-Zn0.5Mg0.5O is predicted to be metastable, with some methods suggesting greater stability than wurtzite.
Abstract
Wurtzite-ZnO is a wide-bandgap polar material with a ferroelectric-switching barrier that is too high to utilize, but the barrier can be reduced and switching observed in substituted materials such as Zn0.5Mg0.5O. Here, we seek to understand atomic-scale features that control concerted polarization switching in these and related systems, focusing on the planar hexagonal structures h-ZnO and Zn0.5Mg0.5O that may act as metastable intermediate phases along the switching pathway. Consensus is obtained by considering a range of pure and dispersion-corrected density-functional theory (DFT) computational approaches, as well as ab initio Hartree-Fock (HF), M{\o}ller-Plesset perturbation-theory (MP2), and random-phase approximation (RPA) calculations. The perceived stability of h-ZnO is found to be strongly influenced by the dispersion correction, with the consensus being that dispersion…
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Taxonomy
TopicsMultiferroics and related materials · Ferroelectric and Piezoelectric Materials · Ferroelectric and Negative Capacitance Devices
