Transient Pauli blocking in a InN film as a mechanism for broadband ultrafast optical switching
Junjun Jia, Minseok Kim, Yuzo Shigesato, Ryotaro Nakazawa, Keisuke Fukutani, Satoshi Kera, Toshiki Makimoto, Takashi Yagi

TL;DR
This paper demonstrates broadband ultrafast optical switching in InN thin films driven by transient Pauli blocking, with a theoretical model explaining the dynamics and enabling design of ultrafast photonic devices.
Contribution
It introduces a new understanding of Pauli blocking induced solely by electronic temperature rise for ultrafast optical switching in degenerate semiconductors.
Findings
Successful broadband switching from visible to near-infrared
Quantified electron-phonon coupling and electronic specific heat
Model accurately predicts spectral switching window
Abstract
The transient Pauli blocking effect offers a promising route for achieving ultrafast optical switching in semiconductors, enabling a rapid switching from an initially opaque state to a relatively transparent state upon photoexcitation. Herein, we demonstrate broadband ultrafast optical switching in degenerate InN thin films, spanning the visible to near-infrared spectral range, using pump-probe transient transmittance measurements. To elucidate the underlying physical mechanism, we perform probe-energy-resolved analysis for ultrafast dynamics, and develop a theoretical model based on a quasi-equilibrium Fermi-Dirac distribution. The model successfully captures the experimental transients and yields an electron-phonon coupling constant of , along with an electronic specific heat coefficient ranging from 1.52 to 2.02…
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Taxonomy
TopicsGaN-based semiconductor devices and materials · Plasmonic and Surface Plasmon Research · Strong Light-Matter Interactions
