Colossal low-field negative magnetoresistance in CaAl$_{2}$Si$_{2}$-type diluted magnetic semiconductors (Ba,K)(Cd,Mn)$_{2}$As$_{2}$

TL;DR

This study explores the magnetic and magnetotransport properties of a layered diluted magnetic semiconductor, revealing colossal low-field negative magnetoresistance and potential for low-temperature magnetoresistive applications.

Contribution

It reports the discovery of colossal low-field negative magnetoresistance in (Ba,K)(Cd,Mn)$_2$As$_2$, a new layered diluted magnetic semiconductor with promising low-temperature magnetoresistive properties.

Findings

Colossal negative magnetoresistance of about -100% at 2 K for y ≥ 0.3.

Bulk ferromagnetism with Curie temperatures up to ~17 K.

Low magnetic field (~0.35 T) saturation of magnetoresistance.

Abstract

We report the magnetic and magnetotransport properties of the layered CaAl$_2$Si$_2$-type diluted magnetic semiconductor (Ba$_{1-x}$K$_x$)(Cd$_{1-y}$Mn$_y$)$_2$As$_2$ over a broad Mn (spin) substitution range of $0.05 \le y \le 0.5$. K substitution introduces hole carriers, whereas Mn provides local moments, resulting in bulk ferromagnetism with Curie temperatures up to $\sim 17$ K. Intrinsic magnetic ordering is further supported by an anomalous Hall contribution and a specific-heat anomaly near $T_{\mathrm{C}}$. A key performance feature is a colossal negative magnetoresistance: for heavily Mn-doped compositions ($y \ge 0.3$), $\mathrm{MR}=[\rho(H)-\rho(0)]/\rho(0)$ reaches approximately $-100\%$ at 2 K and nearly saturates at a relatively low magnetic field of $\sim 0.35\,\mathrm{T}$. The combination of soft ferromagnetism, strong spin-charge coupling, and low-field MR saturation highlights (Ba,K)(Cd,Mn)$_2$As$_2$ as a promising bulk platform for low-temperature magnetoresistive functionalities.