Broadband silicon polarization beam splitter based on Floquet engineering

TL;DR

This paper introduces a broadband silicon polarization beam splitter utilizing Floquet engineering to achieve high polarization extinction ratios over a wide wavelength range with low insertion loss.

Contribution

It presents the first experimental demonstration of a Floquet-engineered silicon PBS with suppressed TE coupling and enhanced TM coupling in a compact 20 um device.

Findings

PER > 20 dB over 1483-1620 nm

Insertion loss of 0.15 dB (TE) and 1.2 dB (TM) at 1550 nm

Compact device length of 20 um

Abstract

A broadband silicon polarization beam splitter (PBS) is proposed and experimentally demonstrated based on Floquet-engineered directional couplers. The total length of the coupling structure is 20 um . By periodically modulating the waveguide width of the directional couplers, the power exchange between the two waveguides for the transverse-electric (TE) mode is suppressed, whereas the power coupling for the transverse-magnetic (TM) mode is enhanced. The fabricated PBS exhibits polarization extinction ratios (PERs) > 20 dB for both polarizations over a broad wavelength range of 1483 nm-1620 nm. Additionally, the measured insertion losses (ILs) are 0.15 dB and 1.2 dB at 1550 nm for TE and TM polarizations, respectively.