Chemical Vapor Deposition Growth and Characterization of ReSe2

TL;DR

This study reports the growth of ReSe2 2D flakes via chemical vapor deposition and their comprehensive optical and structural characterization, including Raman, photoluminescence, and DFT analysis.

Contribution

It presents the first detailed CVD growth process for ReSe2 and combines experimental and theoretical methods to analyze its phonon modes, structure, and electronic properties.

Findings

Eighteen Raman phonon modes identified, matching DFT predictions.

ReSe2 flakes have thicknesses of 5-50 nm.

Absorption spectra show excitonic peaks indicating bandgap energies.

Abstract

Two-dimensional (2D) flakes of ReSe2 structure were grown by chemical vapor deposition and investigated at room temperature using Raman, photoluminescence, and absorption spectroscopies. The Raman spectra revealed eighteen phonon modes in the range of 100-300 cm-1 that were found in good agreement with the density functional theory (DFT) calculations. The thickness profiles of the ReSe2 flakes are in the range of 5-50 nm. The ReSe2 crystal structure and morphology were investigated using XRD, atomic force microscopy and scanning electron microscopy. The energy dispersion spectroscopy confirmed the 1:2 elemental composition. The absorption spectra were obtained for ReSe2 flakes and found to exhibit excitonic peaks in the spectral region of 885 - 942 nm. These peaks are used to define the band gap of the material. The DFT calculations predicted an indirect bandgap of 0.88 eV for the bulk structure, while a direct bandgap of 1.26 eV was predicted for the monolayer.