Magnetization and anomalous Hall effect in SiO2/Fe/SiO2 trilayers
Sudhansu Sekhar Das, M. Senthil Kumar

TL;DR
This study investigates SiO2/Fe/SiO2 trilayers, revealing significant enhancement of the anomalous Hall effect and magnetic properties as Fe layer thickness decreases, with implications for spintronic applications.
Contribution
It demonstrates a substantial increase in anomalous Hall resistance and sensitivity in Fe sandwiched films, highlighting the role of nanostructure and thickness in AHE enhancement.
Findings
Maximum R_Ahs of 2.3 Ohm at 50 Å Fe thickness
R_Ahs increased by 14 times when reducing Fe thickness from 300 Å to 50 Å
Scaling law indicates side jump as dominant AHE mechanism
Abstract
SiO2/Fe/SiO2 sandwich structure films fabricated by sputtering were studied by varying the Fe layer thickness (t_Fe). The structural and microstructural studies on the samples showed that the Fe layer has grown in nanocrystalline form with (110) texture and that the two SiO2 layers are amorphous. Magnetic measurements performed with the applied field in in-plane and perpendicular direction to the film plane confirmed that the samples are soft ferromagnetic having strong in-plane magnetic anisotropy. The temperature dependence of magnetization shows complex behavior with the coexistence of both ferromagnetic and superparamagnetic properties. The transport properties of the samples as studied through Hall effect measurements show anomalous Hall effect (AHE). An enhancement of about 14 times in the saturation anomalous Hall resistance (R_Ahs) was observed upon reducing the t_Fe from 300 to…
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Taxonomy
TopicsZnO doping and properties · Semiconductor materials and interfaces · Metallic Glasses and Amorphous Alloys
