Criticality in memristor devices and the creation of deep memory

TL;DR

This paper presents a method to assess and enhance the deep memory capabilities of real memristor devices by analyzing their signals through critical phenomena theory, aiming to improve memory depth and stability.

Contribution

It introduces a novel approach using Landau {}4 theory to model memristor signals and demonstrates how to modify signals to approach ideal deep memory behavior.

Findings

Enhanced autocorrelation during Spontaneous Symmetry Breaking improves memory capacity.

Signal modifications can emulate ideal SSB behavior in memristors.

Soliton structures demonstrate operational stability of memristors.

Abstract

In the present work we describe a way to assess memory capability of real devices, while proposing to the engineering community what to pursue to create devices with deep associated memory capability. The study of the signal produced by a real memristor nano-device focused on the description in terms of the Landau {\phi}4 theory for the critical phenomena in finite systems. This further allowed the utilization of the property of the anomalous enhancement of the autocorrelation function when a system is on the Spontaneous Symmetry Breaking (SSB), for improving the quantity of the demonstrated memory, while simultaneously maintaining a very good quality, as this is expressed by the stability of the autocorrelation function. In this proof-of-concept case, the morphology of the signal allowed us to impose the appropriate modifications on the signal so that we finally show how to get very close to the characteristics of the SSB and thus achieve our goal to get as close as possible to the ideal behavior of a Memristor that yields deep memory. Finally, we provide proof of the stability of memristor's operation by showing that solitons "follow" as a skeleton structure the experimentally derived time series.