Giant Hole-doping in 2H-WSe2 via Ta Substitution

TL;DR

This paper demonstrates that substituting Ta into 2H-WSe2 induces significant hole doping, enabling control over its electronic properties and potentially causing a semiconductor-to-metal transition, advancing TMDC applications.

Contribution

It introduces a novel Ta substitution method to achieve intrinsic hole doping in 2H-WSe2, a significant step forward in TMDC electronic property tuning.

Findings

Ta substitution causes significant hole doping in 2H-WSe2

Potential semiconductor-to-metal transition observed

Provides a new approach for electronic property control in TMDCs

Abstract

The family of transition metal dichalcogenides (TMDCs) has been regarded as promising candidates for future electronics, valleytronics, spintronics, and optoelectronics. While most of TMDCs are intrinsic n-type semiconductors due to electron donation from chalcogen vacancies, realizing intrinsic p-type TMDCs and achieving precise control over their electronic properties remain challenging. In this work, we introduce a powerful approach to obtain intrinsic hole doping by substituting Ta atom into 2H-WSe2. A combining study of molecular beam epitaxy growth and in-situ angle-resolved photoemission spectroscopy characterization clearly reveals that Ta substitution induces a significant hole doping and provides a possible way of a semiconductor-to-metal transition in 2H-WSe2.