Novel High-Radiopurity Doped Amorphous Silicon Resistors for Low-Background Detectors

TL;DR

This paper introduces highly radiopure doped amorphous silicon resistors designed for low-background detectors in nuclear physics, demonstrating promising performance for specialized experimental applications.

Contribution

The study develops and evaluates doped amorphous silicon resistors with ultra-high radiopurity and suitable electrical and mechanical properties for use in low-background physics experiments.

Findings

Resistors meet ultra-high radiopurity standards.

Resistors exhibit good mechanical and cryogenic performance.

Resistors are compatible with vacuum ultraviolet reflectivity.

Abstract

We present the results of a study of lightly doped amorphous silicon used as a resistive medium for high-radiopurity resistors in nuclear and particle physics research instrumentation. Prototypes are produced for a Time Projection Chamber design for the nEXO neutrinoless double-beta decay search experiment that meet requirements for ultra-high radiopurity, good mechanical, cryogenic and high voltage performance, as well as useful vacuum ultraviolet (VUV) reflectivity. Further study is warranted to refine production methods and to confirm that the technology used here is useful for more general applications.