NiTi Single Crystal Growth by Micro-Pulling-Down Method: Experimental Setup and Material Characterization
Timon Sieweke, Chris Luther, Martin Wortmann, Lauritz Schnatmann, Felicitas Werner, Olga Kuschel, Laila Bondzio, Inga Ennen, Judith B\"unte, Karsten Rott, Oluwaseyi Oluwabi, Moritz Loewenich, Joachim Wollschl\"ager, Andreas H\"utten, Jan Frenzel, Gabi Schierning

TL;DR
This paper introduces a micro-pulling-down method to grow NiTi single crystals, enabling detailed phase transition studies and precise doping, with comprehensive material characterization demonstrating its effectiveness.
Contribution
The study presents a novel micro-pulling-down apparatus for NiTi single crystal growth, allowing controlled doping and detailed characterization of phase transitions.
Findings
Successful growth of NiTi single crystals using the $$PD method.
Detailed characterization confirms high-quality crystals with well-defined phase transitions.
The method reduces oxygen contamination, improving crystal purity.
Abstract
Nickel-titanium that has an austenite to martensite phase transition has been studied extensively in the past as a shape memory alloy, but a lot remains to be learned from such phase transitions. However, single crystals are needed for a detailed characterization of the emerging phase transition. In order to produce NiTi single crystals for research purposes, we have set up a micro-pulling-down (PD) apparatus. The PD process is a fast and flexible method for the fabrication of small single crystals. The apparatus is operated in vacuum. By pulling the crystal down through a hole in the crucible bottom, it is possible to reduce oxygen contamination, since oxides float on top of the melt due to their low density. Here we present a detailed characterization of as-grown NiTi crystals by electron backscatter diffraction (EBSD), scanning electron microscopy (SEM), energy dispersive…
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Taxonomy
TopicsShape Memory Alloy Transformations · Ferroelectric and Piezoelectric Materials · Titanium Alloys Microstructure and Properties
