Symmetry-engineered and electrically tunable in-plane anomalous Hall effect in oxide heterostructures

TL;DR

This paper demonstrates a symmetry-engineered, electrically tunable in-plane anomalous Hall effect in oxide heterostructures, enabling reversible control and potential applications in spintronics.

Contribution

It introduces a novel heterostructure platform that allows deterministic and reversible tuning of the in-plane anomalous Hall effect through symmetry engineering and ionic liquid gating.

Findings

IP-AHE couples to mirror-symmetry breaking in heterostructures

Reversible electrical modulation of IP-AHE achieved

Platform enables programmable Hall functionalities

Abstract

The family of Hall effects has long served as a premier probe of how symmetry, magnetic order, and topology intertwine in solids. Recently, the in-plane anomalous Hall effect (IP-AHE), a transverse Hall response driven by in-plane magnetization, has emerged as a distinct member of this family, offering innovative spintronic functionalities and illuminating intricate interplay between mirror-symmetry breaking and in-plane magnetic order. However, practical routes to deterministically and reversibly control IP-AHE remain limited. Here, we establish a symmetry-engineered IP-AHE platform, CaRuO3/La2/3Ca1/3MnO3/CaRuO3 heterostructure on NdGaO3(110), that turns strict mirror-symmetry breaking constraints into effective tuning knobs. IP-AHE in these epitaxial trilayers unambiguously couples to the CaRuO3-buffer-induced mirror-symmetry breaking and faithfully reproduces the ferromagnetic hysteresis. Ionic liquid gating further enables reversible reconfigurations of the symmetry breaking, thereby achieving electrical modulation and ON/OFF switching of IP-AHE. This highly tunable IP-AHE platform opens pathways for exploring nontrivial magnetic order and developing programmable Hall functionalities in planar geometries.