Interacting electrons in silicon quantum interconnects
Anantha S. Rao, Christopher David White, Sean R. Muleady, Anthony Sigillito, Michael J. Gullans

TL;DR
This paper investigates strongly interacting electron channels in silicon quantum wells, revealing a crossover from Wigner to Friedel regimes and proposing their use for long-range quantum entanglement and scalable quantum computing.
Contribution
It demonstrates the presence of Luttinger liquid physics in silicon interconnects and analyzes the robustness of the Wigner-Friedel crossover under disorder, with implications for quantum information processing.
Findings
Identification of Wigner and Friedel regimes in silicon channels
Robustness of the crossover against disorder up to 400 μeV
Proposal for long-range capacitive coupling enabling quantum entanglement
Abstract
Coherent interconnects between gate-defined silicon quantum processing units are essential for scalable quantum computation and long-range entanglement. We argue that one-dimensional electron channels formed in the silicon quantum well of a Si/SiGe heterostructure exhibit strong Coulomb interactions and realize strongly interacting Luttinger liquid physics. At low electron densities, the system enters a Wigner regime characterized by dominant 4kF correlations; increasing the electron density leads to a crossover from the Wigner regime to a Friedel regime with dominant 2kF correlations. We support these results through large-scale density matrix renormalization group (DMRG) simulations of the interacting ground state under both screened and unscreened Coulomb potentials. We propose experimental signatures of the Wigner-Friedel crossover via charge transport and charge sensing in both…
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Taxonomy
TopicsQuantum and electron transport phenomena · Advancements in Semiconductor Devices and Circuit Design · Semiconductor Quantum Structures and Devices
