Conveyor-mode electron shuttling through a T-junction in Si/SiGe

TL;DR

This paper demonstrates a T-junction device in Si/SiGe that enables high-fidelity electron routing across multiple shuttle lanes, advancing scalable two-dimensional quantum computing architectures with controlled spin qubit manipulation.

Contribution

Introduction of a T-junction in Si/SiGe devices allowing electron routing without extra control lines, with high fidelity and potential for scalable quantum computing.

Findings

Inter-lane charge transfer fidelity of 100% within experimental error

Controlled filling of 54 quantum dots using atomic pulses

Potential for implementing native spin-qubit SWAP gates

Abstract

Conveyor-mode shuttling in gated Si/SiGe devices enables adiabatic transfer of single electrons, electron patterns and spin qubits confined in quantum dots across several microns with a scalable number of signal lines. To realize their full potential, linear shuttle lanes must connect into a two-dimensional grid with controllable routing. We introduce a T-junction device linking two independently driven shuttle lanes. Electron routing across the junction requires no extra control lines beyond the four channels per conveyor belt. We measure an inter-lane charge transfer fidelity of $F = 100.0000000^{+0}_{-9\times 10^{-7}}\,\%$ at an instantaneous electron velocity of $270\,\mathrm{mm}\,\mathrm{s}^{-1}$. The filling of 54 quantum dots is controlled by simple atomic pulses, allowing us to swap electron patterns, laying the groundwork for a native spin-qubit SWAP gate. This T-junction establishes a path towards scalable, two-dimensional quantum computing architectures with flexible spin qubit routing for quantum error correction.