High-Performance KV$_3$Sb$_5$/WSe$_2$ van der Waals Photodetectors

TL;DR

This paper demonstrates high-performance photodetectors using KV$_3$Sb$_5$/WSe$_2$ heterojunctions, showcasing their potential for optoelectronic applications with high responsivity and fast response times.

Contribution

It introduces a novel van der Waals heterostructure based on Kagome metal KV$_3$Sb$_5$ for efficient photodetection, highlighting its high responsivity and fast response.

Findings

Achieved responsivity of 809 mA/W under 520 nm illumination

Demonstrated a fast response time of 18.3 microseconds

Formed a high-quality Schottky interface enabling efficient carrier transport

Abstract

Kagome metals AV$_3$Sb$_5$ (A = K, Rb, Cs) have recently emerged as a promising platform for exploring correlated and topological quantum states, yet their potential for optoelectronic applications remains largely unexplored. Here, we report high-performance photodetectors based on van der Waals KV$_3$Sb$_5$/WSe$_2$ heterojunctions. A high-quality Schottky interface readily forms between KV$_3$Sb$_5$ and WSe$_2$, enabling efficient separation and transport of photoinduced carriers. Under 520 nm illumination, the device achieves an open-circuit voltage up to 0.6 V, a responsivity of 809 mA/W, and a fast response time of 18.3 us. This work demonstrates the promising optoelectronic applications of Kagome metals and highlights the potential of KV$_3$Sb$_5$-based van der Waals heterostructures for high-performance photodetection.