Tunable Carrier Dynamics in Carbide Antiperovskites via A-Site Cation Substitution
Sanchi Monga, Saswata Bhattacharya

TL;DR
This study uses first-principles calculations to explore how substituting A-site cations in carbide antiperovskites affects their electronic structure and carrier relaxation, revealing pathways to tune carrier lifetimes.
Contribution
It provides the first detailed microscopic insight into how A-site cation substitution influences carrier dynamics in carbide antiperovskites.
Findings
Ca6CSe4 has an 18 times longer carrier lifetime than Sr6CSe4.
Carrier cooling occurs within 1-9 ps, slowing near band edges.
Lattice fluctuations and nonadiabatic couplings govern relaxation mechanisms.
Abstract
We present a comprehensive first-principles investigation of the electronic structure and excited-state carrier dynamics in the carbide antiperovskites CaCSe and SrCSe. Using many-body perturbation theory (/BSE), we show that both materials are direct band gap semiconductors with quasiparticle gaps of 1.66 eV (Ca) and 1.22 eV (Sr), lying in the visible-near-infrared range, and exhibit moderate excitonic binding energies. Ab initio nonadiabatic molecular dynamics simulations at 300 K reveal distinct relaxation mechanisms governed by the interplay of band gap, nonadiabatic (NA) couplings, and electronic decoherence. In CaCSe, stronger lattice fluctuations induce 38% larger band gap variations and 28% faster decoherence, which, together with approximately 53% weaker NA couplings, suppress nonradiative recombination and yield lifetimes nearly 18 times longer…
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