A Dual-Gate Altermagnetic Tunnel Junction Based on Bilayer Cr$_{2}$SeO

TL;DR

This paper introduces a dual-gate altermagnetic tunnel junction based on bilayer Cr$_{2}$SeO, demonstrating electric-field-controlled spin splitting and high tunneling magnetoresistance, advancing spintronic device design.

Contribution

It presents a novel dual-gate AMTJ design utilizing electric-field-tunable spin splitting in bilayer Cr$_{2}$SeO, enabling fully electrical control without switching the N{é}el vector.

Findings

Electric field induces significant spin splitting in bilayer Cr$_{2}$SeO.

Reversing electric field alters spin-momentum locking.

Achieves ultrahigh TMR ratio of 10^7.

Abstract

Altermagnets demonstrate significant potential in spintronics due to their unique non-relativistic spin-splitting properties, yet altermagnetic devices still face challenges in efficiently switching logic states. Here, we report electrostatically controllable spin-momentum locking in bilayer Cr$_{2}$SeO and design a dual-gate altermagnetic tunnel junction (AMTJ), which can switch between high and low resistance states without switching the N\'eel vector. First-principles calculations demonstrate that vertical electric field can induce significant spin splitting in bilayer Cr$_{2}$SeO. Reversing the electric field direction can alter the spin-momentum locking in bilayer Cr$_{2}$SeO. Leveraging this electric-field-tunable spin splitting, the dual-gate AMTJ exhibits an ultrahigh tunneling magnetoresistance (TMR) ratio of $10^{7}$. This work provides theoretical support for the design of fully electrically controlled AMTJs and demonstrates their great potential for applications in spintronic devices.