Plastic inorganic Sn2BiS2I3 semiconductor enabled deformable and flexible electronic tongue for heavy metal detection

TL;DR

This paper reports the development of a novel plastic inorganic semiconductor, Sn2BiS2I3, used to create a flexible electronic tongue capable of highly sensitive heavy metal detection with excellent mechanical properties.

Contribution

The study introduces a new deformable semiconductor material, Sn2BiS2I3, and demonstrates its application in a flexible electronic tongue with superior detection limits and mechanical flexibility.

Findings

Detection limit of 1.1 ppb for heavy metals

High linearity with a coefficient of 0.96

Favorable plasticity with hardness of 1.67 GPa

Abstract

Deformable and flexible electronics have garnered significant attention due to their distinctive properties; however, their current applications are primarily limited to the thermoelectric domain. Expanding the range of these electronics and their application scope represents a pivotal trend in their development. In this work, a plastic inorganic semiconductor material, Sn2BiS2I3, with a band gap of 1.2 eV was synthesized and fabricated into a three-electrode flexible and portable electronic tongue capable of detecting heavy metal elements. The electronic tongue device exhibits exceptional linearity and demonstrates resistance against interference from impurity ions. The linear regression equation is expressed as Y=0.24+19.06X, yielding a linear coefficient of approximately 0.96, and the detectable limit stands at around 1.1 ppb, surpassing the 2.0 ppb limit of the ICP-AES instrument. Furthermore, mechanical testing reveals the favorable plasticity of Sn2BiS2I3, as evidenced by the absence of cracks during nanoindentation. The indentation hardness of Sn2BiS2I3 is approximately 1.67 GPa, slightly exceeding the hardness of Cu, which is 1.25 GPa. This study expands the repertoire of deformable and flexible electronics, offering a new and exceptional choice for biomimetic tongue sensor materials.